Varying doping GaAs photocathode by high temperature activation

High quantum efficiency GaAs photocathode has been obtained which has enough long diffusing length and big probability of surface emitting. The two parameters are limited by impure density of p type. An activation experiment of varying doping GaAs photocathode form inner to surface and from low to high has been carried out and the corresponding spectral response has been studied, and results shows that appropriate impure density may obtain GaAs photoelectronic material of high responsively and stability. According to experiment results and predicted quantum efficiency curves of GaAs photocathode, an approach how to design varying doping GaAs photocathode has been improved, which is also an important route to develop high performance photoelectronic material.