III–V on Silicon Nanocomposites

Abstract A new class of Si-based hybrid materials is envisioned and first important steps in their realization were performed. Direct growth of InAs/GaAs core–shell quantum dots with high optical quality could be obtained without any relaxation buffer layer. By applying a multistep epitaxial process, InAs clusters were successfully embedded in a defect-free planar Si matrix. Detailed transmission electron microcopy studies were performed showing a consistent picture in the formation process of relaxed InAs clusters fully embedded in silicon matrix.