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Characteristics of 4HSiC MOS interface annealed in N 2O
Characteristics of 4HSiC MOS interface annealed in N 2O
2005
Keiko Fujihira
Yoichiro Tarui
Masayuki Imaizumi
Kenichi Ohtsuka
Tetsuya Takami
Tatsuya Shiramizu
Kazumasa Kawase
Jyunji Tanimura
Tatsuo Ozeki
Keywords:
Analytical chemistry
Chemistry
Electronic engineering
Annealing (metallurgy)
Silicon carbide
Threshold voltage
Correction
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