Numerov Calculation of AlxGa1-xN/GaN Heterostructure

The calculations are made using a self-consistent solution of the Schrodinger, Poisson, charge and potential balance equations. It is found that the polarization fields act to significantly decrease the 2D sheet charge concentration while reducing the content of Al. The 2D sheet charge concentration increase results from the enhanced band bending and the content increase of Al. By self-consistently sovling the coupled Schrdinger and Poisson equations, we have investingated the property of the two-imensional electron gases(2DEG) in AlxGa1-xN/GaN heterostructures. We demonstrate the dependence of the density, the distribution, and the subband occupation of the 2DEG on the Al content of the AlGaN barrier.