Defect evolution and C + /F + co-implantation in millisecond Flash annealed ultra-shallow junctions

In this paper, we investigate the evolution of extended defects during a msec Flash anneal after a PAI implant and show that during the ultra-fast temperature ramp-up and ramp-down, the basic mechanisms that control the evolution of defects are not modified with respect to the relatively slower RTA anneals. In addition, we show that junction depths below 15 nm can be achieved using a US J fabrication scheme based on the combination of impurity co-implantation with msec Flash anneal.