A 25-Gb/s LD driver with area-effective inductor in a 0.18-µm CMOS

This paper presents high-speed and area-efficient laser-diode driver with interwoven inductor in a 0.18-μm CMOS. We interweave ten peaking inductors for area-effective implementation as well as performance enhancement. Interwoven inductor can not only achieve area-efficiency but also tune frequency characteristic. Mutual inductances of interwoven inductor enhance bandwidth and suppress group delay dispersion. The test chip area is 0.32 mm 2 and the maximum operating speed is 25 Gb/s.