Performance evaluation of nanoscale FETs based on full-band complex bandstructure and real space poisson solver

An improved simulation scheme for investigating the performance of nanoscale FETs is developed in this work, employing atomic charge-potential and full-band current calculation. The device performance calculated with this model is in excellent agreement with that obtained using NEGF solver, but is only at 1/10 of the computational resource. Moreover, a negative capacitance MOSFET is examined with this model and shows improved performance as compared with the conventional MOSFET.