Methods of forming conductive patterns and methods of manufacturing semiconductor devices using the same

In the method of forming a conductive pattern, forming a second conductive film comprising a first conductive film and a metal comprising a metal nitride on the substrate. It includes phosphoric acid, nitric acid, the auxiliary oxidizing agent and excess water, and to use an etching liquid composition having the same etching speed wet etching the first conductive film and second conductive film on the metal nitride and metal. It is possible to form a conductive pattern having a uniform etched surface by the etching liquid composition.