Cyclotron resonance of two-dimensional electrons in AlxGa1−xAs/GaAs heterojunction

Abstract Peculiar behaviour of two-dimensional electron gas in the cyclotron resonance has been studied using a high mobility FET of Al x Ga 1− x As/GaAs heterojunction. The results are fairly well explained by the calculated results based on the theoretical model assuming the long-range scatterer scheme by Ando. However, we find remaining discrepancies between the experimental and the calculated results which have the possibility to be ascribed to some electron-electron correlation effects in the system.