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Low Frequency Noise in In-Situ SiN Passivated InAlGaN/GaN HEMTs
Low Frequency Noise in In-Situ SiN Passivated InAlGaN/GaN HEMTs
2017
Mehdi Rzin
Bruno Guillet
Laurence Méchin
P. Gamarra
C. Lacam
Farid Medjdoub
Jean-Marc Routoure
Keywords:
In situ
Optoelectronics
Materials science
Infrasound
Correction
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