Effect of Fin Doping Concentration on the Electrical Characteristics of Germanium-on-Insulator Multi-Gate Field-Effect Transistor

Drain Voltage VDS (V) Effect of Fin Doping Concentration on the Electrical Characteristics of Germanium-on-Insulator Multi-Gate Field-Effect Transistor Bin Liu, 1 Xiao Gong, 1 Chunlei Zhan, 1 Genquan Han, 1 Nicolas Daval, Christelle Veytizou, Daniel Delprat, Bich-Yen Nguyen, and Yee-Chia Yeo. 1 Department of Electrical and Computer Engineering, and Graduate School of Integrative Sciences and Engineering, National University of Singapore (NUS), Singapore 117576. 2 Soitec, Parc technologique des fontaines, F-38190 Bernin, France. Phone: +65-6516-2298 E-mail: yeo@ieee.org