All-organic thin-film transistors using photoacryl as a gate insulator

Abstract In this study, we have fabricated all organic thin-film transistors using photoacryl as a dielectric layer and pentacene as a semiconductor layer. Potoacryl was spin coated and cured at 220 °C for 1 h and its breakdown field was larger than 1 MV/cm. Field effect mobility, threshold voltage, and on–off current ratio in 1.2-μm-thick gate dielectric layer were 0.039 cm 2 /V s, −7 V, and 10 6 . To improve the electrical characteristics of our organic thin-film transistor, we reduced the thickness of photoacryl dielectric layer. As a result, field effect mobility, threshold voltage, and on–off current ratio in 0.6-μm-thick gate dielectric layer were 0.075 cm 2 /V s, −6 V, and 10 6 , respectively.