Experiments with organic field effect transistors based on polythiophene and thiophene oligomers

Abstract A flexible organic field effect transistor was developed based on 2,5-dihexylsexithiophene (DH6T), a recently synthesized thiophene oligomer with high regioregularity. The oligomer was tested on highly doped silicon as gate electrode and SiO 2 as gate insulator film. For experiments on flexible substrates, aluminium was used as gate electrode. Several materials were tested as gate insulators with the best dielectric properties obtained for anodically formed aluminium oxide. In combination with the oligomer, this gate insulator is definitely suitable for further developments.