Constraints on Models of Electrical Transport in Optimally Doped La2−xSrxCuO4 from Measurements of Radiation-Induced Defect Resistance

Precise measurements of the temperature dependence of additional resistivity caused by defect scattering were used to constrain models of carrier transport in La1.84Sr0.16CuO4. Where previous magnetotransport studies have delineated two distinct scattering processes, proportional to T and T2, respectively, the new defect scattering results suggest strongly that the two processes act as parallel conductance channels.