PULSE DURATION EFFECTS ON LASER ANNEAL SHALLOW JUNCTION

Ultra shallow junction was formed by KrF excimer laser anneal method changing laser pulse duration. A simple one-dimensional thermal diffusion model was utilized to obtain time dependent temperature profile and to understand the influence of the pulse duration on junction properties such as junction depth, sheet resistance and residual defects. The model analysis also suggested that substrate heating during laser irradiation was effective to reduce the required laser energy density to activate dopants by melting pre-amorphized layer.