Old Web
English
Sign In
Acemap
>
Paper
>
X-Ku帯高効率GaN HEMT増幅器MMICの開発(化合物半導体デバイス及び超高周波デバイス/一般)
X-Ku帯高効率GaN HEMT増幅器MMICの開発(化合物半導体デバイス及び超高周波デバイス/一般)
2015
yositaka araida
youiti kamada
tosihiro taki
sirou ozaki
gouzou makiyama
naoya okamoto
yuu satou
satosi masuda
yosi ni watanabe
Keywords:
Analytical chemistry
High-electron-mobility transistor
Materials science
Optoelectronics
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]