A new compact model for AlGaN/GaN HEMTs including self-heating effects

This paper presents a new compact electrothermal model for GaN high electron mobility transistors (HEMTs). An analytic and succinct expression for the drain current Ids is acquired by combining surface potential based method and channel division method. Self-heating effects are described in the model by introducing an empirical expression for the critical electric field Ec as a function of temperature and gate voltage. The presented I-V model can accurately fit DC measurements. Furthermore, good agreement between RF simulations and measurements can be achieved by substituting the I-V model in this paper for the original Ids module in a compact large-signal model.