Improvment crystallinity of SiC films by addition of CF4 in HFCVD

Abstract With CF 4 addition, crystalline 3C–SiC films were synthesized at a low substrate temperature of 480°C by hot filament chemical vapor deposition with CH 4 –SiH 4 –H 2 gas mixture. It was observed that the full-width at half-maximum of both vibration peaks of Si–C bonds in Fourier transform infrared spectra and 3C–SiC (1 1 1) peaks in X-ray diffraction patterns decreased evidently as the flux of CF 4 increased. The results imply that the crystallinity of the films can be improved by adding CF 4 . Moreover, the micrographs of atomic force microscopy showed that the surface of the SiC films became rougher with the flux of CF 4 increasing, which is resulted from the larger grains of the SiC films.