Optical and electrical characterization of In‐doped ZnMgO films grown by spray pyrolysis method

In-doped Zn0.9Mg0.1O (0 ∼ 5 mol%) films on glass substrate were successfully grown by a spray pyrolysis method at 500 °C. The c-axis orientation became weak with increasing indium concentration. This indicated that In-doping caused the degree of crystallinity of the Zn0.9Mg0.1O films to decrease. Indium atoms could be acted as a donor type impurity because electrical conduction types in the undoped and In-doped films indicated all n-types and In-doping caused the resistivity to decrease and carrier concentration to increase. Furthermore, In-doping caused the number of nonradiative recombination centers to increase because photoluminescence intensity decreased with increasing indium concentration. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)