High voltage light-emitting diode and manufacturing method thereof

The invention relates to a manufacturing method of a high voltage light-emitting diode. The manufacturing method of the high voltage light-emitting diode comprises the steps of forming an insulating buffer layer on a substrate; forming an n-type semiconductor layer, an active layer and a p-type semiconductor layer on the insulating buffer layer; patterning the n-type semiconductor layer, the active layer and the p-type semiconductor layer, then etching the n-type semiconductor layer, the active layer and the p-type semiconductor layer to form grooves till the insulating buffer layer is exposed out of the bottoms of the grooves, forming a plurality of isolated luminous units through the grooves; and forming metal interconnecting wires, and connecting the adjacent luminous units in series. The manufacturing method is characterized in that the grooves are 2.5mu m-4mu m deep. By adopting the manufacturing method of the high voltage light-emitting diode, the damages to the active area of LED (light-emitting diode), which are caused by the long-term plasma bombardment, are reduced, and the luminous degree of LED is improved.