Atomistic Simulations of Deposition Processes of Epitaxial Layers

The deposition process of epitaxial layers is simulated by the method of molecular dynamics. The interaction forces between atoms are calculated using the Stillinger-Weber potential. Before the deposition of atoms, the substrate is equilibrated at a specified temperature. Atoms with identical initial velocities and with initial coordinates selected at random in the plane parallel to the growth surface arrive at the substrate to form an overlayer. During the deposition, the lower part of the substrate is held at an initially specified temperature by velocity scaling. How the growth morphology of an overlayer is influenced by the substrate temperature is investigated in connection with the behavior of deposited atoms.