Study of resistance of low-noise amplifier based on GaN PHEMT, to input microwave power

N. E. Antonova,V. E. Zemliakov,A. V. Krutov,A. S. Rebrov

Study of resistance of low-noise amplifier based on GaN PHEMT, to input microwave power

2010

N. E. Antonova
V. E. Zemliakov
A. V. Krutov
A. S. Rebrov

Development and practical realization results of low noise amplifiers robust to input microwave power are presented. The measured parameters are shown.

Keywords:

Amplifier
Electronic engineering
Gallium nitride
Wide-bandgap semiconductor
Physics
Silicon carbide
Electrical engineering
Instrumentation amplifier
Microwave
High-electron-mobility transistor
Low-noise amplifier
Robustness (computer science)

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