Exploring impurity phases derived from the introduction of vanadium ions in yttrium gallium garnet

Abstract The associated impurity phases derived from the introduction of vanadium ions in yttrium gallium garnet (YGG) were investigated in detail. The XRPD data indicate that β-Ga2O3 is contained in all synthesized samples and YVO4 can be identified when the V-doped concentration above 0.5 at. %. The existence of β-Ga2O3 is related to the antisite defects usually contained in the garnet host, and the generation of YVO4 is mainly derived from its lower formation temperature in comparison to the garnet phase. The micro-area composition analysis further verifies the existence of impurity phases, and the X-ray computed tomography survey provides a more visualized spatial distribution of the YVO4 phase. Moreover, the fluorescence analysis manifests a more sensitive phase identification than the XRPD technique, and the YVO4 impurity phase can be detected even if the V-doped content is reduced to 0.2 at. %. Additionally, the evaluated V/(V + Y + Ga) ratios from structure refinement coincide well with the theoretical value in the low-doping section, and the slight deviation in the high doping part is mainly attributed to the volatilization of vanadium oxides. What discussed in this study offers a comprehensive analysis strategy for the detection of impurity phases originating from ion doping.