High-power single-mode 915-nm, InAlGaAs quantum-well lasers grown by MOCVD

We report results on single-mode, InAlGaAs/AlGaAs/GaAs, 915 nm, lser-diodes operating reliably at 300 mW. The graded-index, separate-confinement, strained, single quantum-well structure was grown by metal-organic chemical-vapor deposition. Carbon, rather than zinc, was used as the p-doping srouce to reduce internal loss and potential reliability issues due to the thermal diffusion of zinc. A threshold current density of 133 A/cm 2 , internal loss of 2.0 cm -1 and internal quatnum efficiency of 93% were achieved. FOr 1500 μm long ridge waveguide lasers, a record single-mode output-power of 500mW was obtained for devices mounted epitaxial-side up onto AlN submounts using eutectic Au 80 Sn 20 solder. Ten burned-in devices have now been aged at a constant current of 450 mA at 85°C for more than 1500 hours wihtout measurable degradation.