GaN/AlN nanowires : nucleation, polarity and quantum heterostructures

Using specific conditions, GaN can be epitaxially grown on a large variety of substrates as a nanowire (NW) array. This geometry allows the subsequent growth of wire-like heterostructures likely free of extended defects, which makes them promising for increasing device controllability and performance. First, my PhD work has been devoted to the understanding of self-organized nucleation of GaN NWs on silicon substrates. For this purpose, a deep characterization of the growth mechanism of the AlN buffer deposited prior to NW nucleation has been done, emphasizing an unexpected large reactivity of Al with the substrate. The requirement of the N polarity to nucleate GaN NWs has been evidenced, although the possible existence of NWs hosting a Ga polar core has been observed as well. In these NWs, an inversion domain boundary is present and has been demonstrated to be optically active, having a photoluminescence signature at 3.45 eV. Next, GaN/AlN wire heterostructures have been grown for structural and optical characterization. It has been shown that by changing the wire diameter, different growth mode for the heterostructure could be reached.At last, thanks to the cylindrical geometry of NWs, the measurement of diffusion length for charge carriers in GaN and AlN NWs have been performed.