Electrochemical etching of p–n -GaN/AlGaN photoelectrodes
2016
Specific features of etching of GaN/AlGaN p–n structures in a KOH-based electrolyte have been studied. It was found that the corrosion process first passes across p layers through vertical channels associated with threading structural defects. Then, the corrosion process occurs in the lateral direction along n layers of the structure, with local hollows and voids thereby formed. The lateral etching is due to the presence of positive piezoelectric charges at boundaries of n-AlGaN and n-GaN layers and positively charged ionized donors in the space-charge region of the p–n junction.
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