Deposition of a-Si" H films by ECR plasma CVD using large diameter multi-slot antennae

Abstract A large diameter electron cyclotron resonance plasma was produced with a multi-slot antenna. The radial profile of the ion saturation current was examined as a function of input microwave power, gas pressure and magnetic mirror coil current to determine the experimental conditions necessary for a large diameter and uniform plasma at low pressure. Furthermore, the deposition of a-Si: H films was attempted onto 8 inch glass substrates using a gas mixture SiH 4 -10% He.