BiCMOS at low supply voltage

The effect of scaling device feature size on MOS and bipolar device performance is reviewed. Scaling power supply with proper device scaling is discussed. It is shown that conventional BiCMOS circuit operates faster than CMOS down to 3 V power supply. In the range 3 V to 2 V BiNMOS and QCBiCMOS circuits demonstrate superior performance particularly the latter. For sub-2 V operation, circuit configuration based on the saturation of the bipolar transistors showed good performance, but still many new configurations must be investigated.