Ion beam modification of 6H/15R SiC crystals☆

Large single crystals of silicon carbide consisting predominantly of 6H polytype have been implanted with hydrogen, nitrogen, or aluminum ions at 300 K. Rutherford backscattering-channeling techniques have been used to characterize atomic displacement effects resulting from implantation and postimplantation annealing at 573 K. Amorphization fluences for all three ions correspond to deposition of a critical damage energy of 2 × 1021keVcm3. Annealing of N+ or Al+ implanted crystals for 0.5 h at 573 K produces appreciable recovery in damaged but crystalline regions. Defect annealing is inhibited in amorphous and heavily doped areas of the crystals.