Physics based scalable MOSFETmismatch modelfor statistical circuit simulation

MOSFET mismatch modelbasedon MOSFETs.Thisapproach ismuchmoreaccurate because BSIM3v3fora CMOS 0.13ptm technology usingMOSFETmismatch characterisation data isusedtoderive backward propagation ofvariance (BPV)methodologytherandomvariations inMOSFET physical model coupled withPelgrom modelbasis wasdeveloped. Test parameters. Furthermore, thedeveloped MOSFET structures werecarefully designed forintrinsic mismatch modelispractical anduseful asitcanbeused MOSFET draincurrent mismatchcharacterisation seamlessly withcircuit simulator toperform MonteCarlo under4different gatevoltages thatvaryfromweakto statistical circuit simulation. strong inversion forbothlinear andsaturation regions. MonteCarlo MOSFETmatched pair simulation using II. MISMATCHTESTSTRUCTURES HSPICEwasperformed formodelverification. The modelwasshowntobescalable fordifferent biases and The MOSFET mismatchteststructures are sizesand physically consistent inpredicting the manufactured using CharteredSemiconductor MOSFET mismatch inthreshold voltage inlinear and Manufacturing (CSM)nominal 0.13ptm CMOS process saturation regions. technology multi-project wafer (MPW)service.