(Invited) Epitaxial Formation of Graphene on Si Substrates: From Heteroepitaxy of 3C-SiC to Si Sublimation

Since the pioneering work by Novoselov and Geim in 2004 [1], graphene has attracted skyrocketing attention as a new electronic material. Behind this enthusiasm are the fundamental limitations that silicon is facing, which impede further scaling of Si devices down into sub-10 nm regions. In this respect, the expectation for graphene is two-fold: medium term and long term. As for the former, the expectation as a new channel material in field-effect transistors (FET) is at its center (More Moore strategy). As for the latter, graphene’s novel quantum properties are expected to bring about new paradigm of information processing (Beyond CMOS strategy). The fact that many quantum phenomena, such as quantized Hall effect [2] and spin-polization of the current [3], can be observed at room temperatures in graphene, which is not usual in other materials, fuels the trend.