Controlling Plastic Relaxation Using Graded Superlattice Buffer Layers

AlSb layers thicker than the critical thickness for the onset of plastic relaxation were successfully grown on (001) GaSb substrates by molecular beam epitaxy. This was achieved using graded superlattice buffer layers (gSL-BL). The accommodation of misfit strain using this buffer is discussed, and the X-ray diffraction characteristics of the buffer are presented. The diffraction pattern is shown to modulates into two sets of satellite peaks.