Influence of the composition on the electrical properties of amorphous chalcogenides AgGe1 + xAs1 − xS3

This article is devoted to the synthesis and examination of the electrical properties of amorphous chalcogenides AgGe1 + xAs1 − xS3 (x = 0.1, 0.4–0.6, 0.9) at low temperatures. The studies are performed in order to obtain materials with improved characteristics (an increase in the fraction of the ionic transfer, a decrease in the temperatures of its emergence, and an increase in conductivity). The synthesized compounds are electron-ion conductors. An increase in the Ge fraction leads to an increase in the temperature corresponding to the onset of ionic transport and to a decrease in conductivity.