Droplet induced compositional inhomogeneities in GaAsBi

Compositional inhomogeneities in III-V alloys heavily influence the device performance. This work presents evidence for Ga droplets inducing inhomogeneities in the Bi composition, which we propose is due to a variation in the Ga flux across the surface. These inhomogeneities may be manipulated through the use of growth interrupts, which eliminate the buildup of Ga at the growth front.