Passivation film, coating materials, solar cell element and the passivation Makuzuke silicon substrate

A passivation film used for the solar cell element having a silicon substrate configured to include a and aluminum oxide niobium oxide. Further, the solar cell element, a p-type silicon substrate 1 made of single crystal silicon or polycrystalline silicon, the diffusion layer 2 of the impurity of the n-type formed on the light receiving surface side of the silicon substrate 1, the surface of the diffusion layer 2 to a first electrode 5 formed, a second electrode 6 formed on the back surface side of the silicon substrate 1, are formed on the back side of the surface of the silicon substrate 1, aluminum oxide and niobium having a plurality of openings OA a passivation film 7 containing, comprising a second electrode 6 is configured to form an electrical connection through the surface and a plurality of openings OA of the back surface side of the silicon substrate 1.