Spin/carrier dynamics at semiconductor interfaces using intense, tunable, ultra-fast lasers

We review recent advances in spin/carrier dynamics at semiconductor interfaces using intense, tunable, ultrafast lasers, involving (a) carrier dynamics at Si/SiO 2 interfaces with different oxide thicknesses, (b) radiation enhanced electron transport in ultra-thin oxides, and (c) ultrafast spin dynamics in semiconductor heterostructures, probed by second-harmonic generation (SHG).