MBE growth of GaAs/AlAs QW structures on GaAs channeled substrates with submicron facets

Abstract Optical properties of MBE-grown GaAs/AlAs quantum wells (QW's) on GaAs(100) channeled substrates with submicron slope facets are reported for the first time. Quantum wells were prepared on GaAs(100) substrates with 2.2 μm wide (311)A slope facets under the MBE condition of an almost normal incident angle of the Ga beam to the slope facet, which results in 18% larger Ga flux intensity in the slope region than in the (100) flat region. During MBE growth, the (311)A facet disappeared and 0. μm wide (211)A and 1.6 μm wide (411)A facets emerged. The thickness of the GaAs layer on (211)A is 20% larger, while the thickness of the GaAs layer on (411) is almost the same as that on (100) flat region. The cathodoluminescence spectra from the QW's in the slope region shows the red shift from that of the QW's in the (100) flat region (787 nm → 797 nm), indicating the possible lateral confinement of carriers in the submicron wide (211)A slope region on the GaAs channeled substrates.