Application of resonant backscattering spectrometry for determination of pore structure changes

Abstract In the present work slightly oxidised porous silicon samples of columnar type were investigated by resonant elastic scattering using the 3045 keV resonance in the 16 O( α , α ) 16 O reaction. If the incident energy is slightly above the resonance energy, a characteristic peak appears in the energy spectra of the backscattered particles. In porous material the individual ions travel fluctuating distance in pores, hence, the peak width depends on the structure of the sample. When changing the direction of the analysing beam to the sample, the width of the resonance peak changes in a special way characterising the angular distribution of the pore walls. This resonance method was applied to columnar type porous Si samples implanted by 4 MeV N ions at various tilt angles and fluences. It was shown that the beam tilts the pore walls by an angle proportional to the fluence and the sine of the angle between the beam and the pore walls. Meantime, the angular divergence of the pore walls also increases. The underlying mechanism is briefly discussed.