Quantum Materials Based on Metamorphic InAsSb

2019 
Bandgap and carrier dispersion in superlattices (SL) based on InAsSb can be precisely controlled by variation of the layer composition and width. However, when grown strain-balanced on GaSb, possible SL designs are seriously limited. The virtual substrate approach on the other hand removes this limitation thus opening a way to design SLs and QWs with non-generic electronic properties including Dirac carrier dispersion and topologically nontrivial states.
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