Characterization of pyramidal inversion boundaries in Sb2O3‐doped ZnO by using electron back‐scattered diffraction (EBSD)

The composition planes of the inversion boundary induced by the addition of Sb2O3 to ZnO ceramics were analyzed crystallographically by the application of electron back-scattered diffraction (EBSD) analysis and stereographic projection techniques. The inversion boundary was determined to consist of three discrete composition planes, \{0001\}, \{10\bar{1}1\}, \{10\bar{1}0\}.