Effect of Pressure on the Electrical Resistance of Individual Boron-Doped Carbon Nanotubes
2012
The electrical resistance of an individual boron-doped multi-walled carbon nanotube was measured under high pressure up to 1.73 GPa. The resistance decreased drastically when pressure was applied. The temperature dependence of the resistance was explained by a variable range hopping transport model, and the dimensionality was observed to change from one to three dimensions with increasing pressure.
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