A kind of production method of polycrystalline SiTFT

A kind of production method the invention discloses polycrystalline SiTFT includes: to provide a glass substrate, and buffer layer and polysilicon layer are sequentially formed on the glass substrate；It is coated with a photoresist on the polysilicon layer, and the photoresist is exposed and is etched using half-tone mask light shield；High dose P doping is ion implanted, forms N+；Insulating layer and grid layer are sequentially formed on the full surface of the glass substrate；It is coated with a photoresist on the grid layer, and the photoresist is exposed using half-tone mask light shield；High dose B doping is ion implanted, forms P+.The present invention can be reduced light shield number, can effectively reduce cost.