Coexistence of memristive and memcapacitive effects in oxide thin films

Polycrystalline bismuth ferrite (BiFeO3, BFO) thin films are fabricated by pulsed laser deposition technique on Pt/Ti/SiO2/Si substrates, the current–voltage (I–V) and capacitance–voltage (C–V) measurements show that the Au/BFO/Pt structure simultaneously show resistive and capacitive switchings. By tuning the amplitude of the external voltage, multiple resistance states and capacitance states are obtained. The conduction mechanism of the Au/BFO/Pt is analyzed to explain the switchings, and temperature-dependent I–V and C–V measurements are performed to demonstrate that ferroelectric switching is not the root cause of the resistive and capacitive switching in the examined BFO thin films.