InAlN/InGaN/GaN double heterostructure with improved carrier confinement and high-temperature transport performance grown by metal-organic chemical vapor deposition

A nearly lattice-matched InAlN/InGaN/GaN double heterostructure (DH) and traditional InAlN/GaN single heterostructure (SH) were grown by metal–organic chemical vapor deposition. The InN mole fraction of InGaN channel was deduced by XRD and photoluminescence. The electrical properties were characterized by capacitance-voltage and temperature-dependent Hall measurements. Both results revealed that the InAlN/InGaN/GaN DH possessed superior carrier confinement over traditional InAlN/GaN SH owing to the back barrier formed at the InGaN/GaN interface, which prevents the spilling over of carriers and thus remarkably improves the transport performance at high temperature. Furthermore, a thin InGaN layer was preferable for carrier channel applications to a thick one.