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01aA02 熱パルス法を用いた均一組成InGaSb結晶成長(半導体バルク(1),第36回結晶成長国内会議)
01aA02 熱パルス法を用いた均一組成InGaSb結晶成長(半導体バルク(1),第36回結晶成長国内会議)
2006
takuya hikita
rin syou murakami
tadanobu oyama
yosi bi momose
seizi kumakawa
yasuhiro hayakawa
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