High sensitivity slow light interferometer based on dispersiveproperty of III-V and II-VI semiconductor materials

We investigate the optical properties of Ⅲ-Ⅴ and Ⅱ-Ⅵ semiconductors. The results show that the sensitivity of the interferometer can be greatly enhanced by the dispersive property of semiconductor. Furthermore, the analyses show that the semiconductor slow light medium has a more wider working spectral range than gas slow light medium. Moreover, we experimentally demonstrate that the sensitivity of the interferometer based on the semiconductor GaAs is 3.2 times higher than those of traditional interferometers.