Radiation Resistance of (HgSe) 3 (In 2 Se 3 )

We present the results of studies of the effect of electron irradiation on the electrophysical parameters of (HgSe)3(In2Se3) crystals, which are semimagnetic semiconductors with stoichiometric vacancies. It is shown that irradiation of (HgSe)3(In2Se3) with high-energy electrons (Ee = 10 MeV, dose D = 1016 cm–2) has little effect on the electrophysical and magnetic properties, which indicates their high radiation resistance.