Optical and photoelectrochemical properties of Cu2SrSnS4 thin film fabricated by a facial ball-milling method

Abstract Earth-abundant and non-toxicity quaternary chalcogenide Cu 2 SrSnS 4 is prepared by a facial ball-milling method. Its formation is revealed to be from the reaction between Cu 2 SnS 3 and SrS at 600 °C. The bandgap of the prepared Cu 2 SrSnS 4 film is speculated around 1.78 eV according to absorption test. The carrier lifetime of the prepared Cu 2 SrSnS 4 film is about 2.06 ns. The photocurrent density of the Cu 2 SrSnS 4 film is about 150 μA cm −2 at −670 mV bias vs Ag/AgCl electrode and it repeats after 10 cycles of 1000 s. Its notable generation of photocurrent and photoelectrochemical stability indicates its potential for photoelectric conversion application.