Metal free growth and characterization of InAs1-xPx nanowires

InAs nanowires have been grown without the use of Au or other metal particles as catalyst by metal‐organic vapor phase epitaxy. The nanowires growth is initiated by a thin layer of SiOx. The wires exhibit a non‐tapered shape with a hexagonal cross section. In addition to InAs also InAs1−xPx wires are grown and the incorporation of P is studied by photoluminescence.