High-Resolution Analysis on Patterned Resist by Auger Electron Spectroscopy

The distribution of silicon in the 0.5 µm resist pattern formed using a silylation reagent was analyzed by the Auger electron spectroscopy (AES) method. Since the resist was an insulator, a special technique was required during AES analyses. Spatial resolution was estimated by a line-scan method on the resist pattern. Both qualitative and quantitative analyses were carried out. The spatial distribution of silicon atoms derived from the silylation reagent was measured, and the surface of the resist pattern was found to be covered with a thin SiO2 layer of 3 nm thickness. From the depth profile of silicon content, it was found that the distribution of silicon was strongly influenced by the intensity of photon exposure, and that the diffusion mechanism of the silylation reagent is non-Fickian type, the so-called "Case II" diffusion.